Fairchild ISL9V5036S3ST IGBT, 46 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
- N° de stock RS:
- 166-2051
- Référence fabricant:
- ISL9V5036S3ST
- Fabricant:
- Fairchild Semiconductor
En cours d'approvisionnement - expédition le 10/02/2025, livraison sous 4 jour(s)
Ajouté
Prix L'unité (sur une bobine de 800)
2,061 €
(TVA exclue)
2,494 €
(TVA incluse)
| Unité | Prix par unité | la bobine* |
| 800 + | 2,061 € | 1 648,80 € |
| *prix conseillé | ||
- N° de stock RS:
- 166-2051
- Référence fabricant:
- ISL9V5036S3ST
- Fabricant:
- Fairchild Semiconductor
Législations et de normes
Détails du produit
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 46 A |
| Maximum Collector Emitter Voltage | 420 V |
| Maximum Gate Emitter Voltage | ±14V |
| Maximum Power Dissipation | 250 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.67 x 9.65 x 4.83mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |