onsemi FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 124-1336
- Référence fabricant:
- FGH40N60SMD
- Fabricant:
- onsemi
En cours d'approvisionnement - expédition le 29/05/2024, livraison sous 4 jour(s)
Ajouté
Prix L'unité (dans un tube de 30)
4,246 €
(TVA exclue)
5,138 €
(TVA incluse)
| Unité | Prix par unité | le tube* |
| 30 - 120 | 4,246 € | 127,38 € |
| 150 - 270 | 3,677 € | 110,31 € |
| 300 + | 3,482 € | 104,46 € |
| *prix conseillé | ||
- N° de stock RS:
- 124-1336
- Référence fabricant:
- FGH40N60SMD
- Fabricant:
- onsemi
Documentation technique
Législations et de normes
Détails du produit
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 349 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
- N° de stock RS:
- 124-1336
- Référence fabricant:
- FGH40N60SMD
- Fabricant:
- onsemi