Fuji Electric 1MBi200U4H-120L-50 Single IGBT Module, 200 A 1200 V, 7-Pin M259, Panel Mount
- N° de stock RS:
- 747-1119
- Référence fabricant:
- 1MBi200U4H-120L-50
- Fabricant:
- Fuji Electric
Produit discontinué
Produit de remplacement
Ce produit n'est pas disponible actuellement. Voici notre produit de remplacement:
- N° de stock RS:
- 747-1119
- Référence fabricant:
- 1MBi200U4H-120L-50
- Fabricant:
- Fuji Electric
Documentation technique
Législations et de normes
- Pays d'origine :
- MY
Détails du produit
IGBT Modules 1-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 200 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 1040 W |
| Configuration | Single |
| Package Type | M259 |
| Mounting Type | Panel Mount |
| Channel Type | N |
| Pin Count | 7 |
| Transistor Configuration | Single |
| Dimensions | 108 x 62 x 30mm |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 747-1119
- Référence fabricant:
- 1MBi200U4H-120L-50
- Fabricant:
- Fuji Electric