- N° de stock RS:
- 188-5416
- Référence fabricant:
- FM25L16B-G
- Fabricant:
- Infineon
Fonctionnalité momentanément indisponible, veuillez nous contacter
Ajouté
Prix L'unité (dans un tube de 97)
1,369 €
(TVA exclue)
1,656 €
(TVA incluse)
Unité | Prix par unité | le tube* |
97 - 97 | 1,369 € | 132,793 € |
194 - 485 | 1,23 € | 119,31 € |
582 - 970 | 1,197 € | 116,109 € |
1067 + | 1,164 € | 112,908 € |
*prix conseillé |
- N° de stock RS:
- 188-5416
- Référence fabricant:
- FM25L16B-G
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
- Pays d'origine :
- US
Détails du produit
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Spécifications
Attribut | Valeur |
---|---|
Memory Size | 16kbit |
Organisation | 2K x 8 bit |
Interface Type | SPI |
Data Bus Width | 8bit |
Maximum Random Access Time | 20ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.48mm |
Length | 4.97mm |
Maximum Operating Supply Voltage | 3.6 V |
Width | 3.98mm |
Height | 1.48mm |
Maximum Operating Temperature | +85 °C |
Minimum Operating Supply Voltage | 2.7 V |
Automotive Standard | AEC-Q100 |
Minimum Operating Temperature | -40 °C |
Number of Words | 2k |
Number of Bits per Word | 8bit |