onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

N° de stock RS:: 463-000
Référence fabricant:: MJ11016G
Fabricant:: onsemi

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

264 En stock pour livraison sous 1 jour(s)

Ajouté

Prix L'unité (en paquet de 2)

5,65 €

(TVA exclue)

6,84 €

(TVA incluse)

Unité	Prix par unité	le paquet*
2 - 8	5,65 €	11,30 €
10 - 98	4,51 €	9,02 €
100 - 198	4,025 €	8,05 €
200 - 498	3,80 €	7,60 €
500 +	3,545 €	7,09 €
*prix conseillé

N° de stock RS:: 463-000
Référence fabricant:: MJ11016G
Fabricant:: onsemi

Documentation technique

Législations et de normes

Détails du produit

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity

Versions Available:
463-000 - pack of 2
100-7565 - tray of 100

Spécifications

Attribut	Valeur
Transistor Type	NPN
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Height	8.51mm
Dimensions	39.37 x 26.67 x 8.51mm
Maximum Operating Temperature	+200 °C
Length	39.37mm
Minimum Operating Temperature	-55 °C
Width	26.67mm

N° de stock RS:: 463-000
Référence fabricant:: MJ11016G
Fabricant:: onsemi