Infineon BFP650H6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin SOT-343

  • N° de stock RS 165-8080
  • Référence fabricant BFP650H6327XTSA1
  • Fabricant Infineon
Documentation technique
Législations et de normes
Déclaration de conformité RoHS
Pays d'origine : CN
Détails du produit

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Attribut Valeur
Transistor Type NPN
Maximum DC Collector Current 150 mA
Maximum Collector Emitter Voltage 13 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 500 mW
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 13 V
Maximum Emitter Base Voltage 1.2 V
Pin Count 4
Number of Elements per Chip 1
Dimensions 2 x 1.25 x 0.9mm
Length 2mm
Height 0.9mm
Maximum Operating Temperature +150 °C
Width 1.25mm
Transistor Material SiGe
3000 En stock pour livraison sous 1 jour(s)
Prix Each (On a Reel of 3000)
(TVA exclue)
(TVA incluse)
Prix par unité
la bobine*
3000 +
0,156 €
468,00 €
*prix conseillé