Cypress Semiconductor, CY62158ELL-45ZSXI

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Déclaration de conformité RoHS
Pays d'origine : PH
Détails du produit

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Wide voltage range: 4.5 V–5.5 V
Ultra low active power
Typical active current:1.8 mA at f = 1 MHz
Typical active current: 18 mA at f = fmax
Ultra low standby power
Typical standby current: 2 μA
Maximum standby current: 8 μA
Easy memory expansion with CE1, CE2 and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 44-pin TSOP II package

SRAM (Static Random Access Memory)

Spécifications
Attribut Valeur
Memory Size 8Mbit
Organisation 512k x 16 bit
Number of Words 512k
Number of Bits per Word 16bit
Maximum Random Access Time 45ns
Address Bus Width 8bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Height 1.04mm
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Maximum Operating Supply Voltage 5.5 V
Minimum Operating Supply Voltage 4.5 V
Width 10.26mm
Length 18.51mm
405 En stock pour livraison sous 1 jour(s)
Prix Each (In a Tray of 135)
8,428
(TVA exclue)
10,198
(TVA incluse)
Unité
Prix par unité
le plateau*
135 +
8,428 €
1.137,78 €
*prix conseillé