Infineon SRAM Memory Chip, CY62148ELL-45ZSXI- 4Mbit

N° de stock RS:: 188-5323
Référence fabricant:: CY62148ELL-45ZSXI
Fabricant:: Cypress Semiconductor

Infineon SRAM Memory Chip, CY62148ELL-45ZSXI- 4Mbit

Voir l’ensemble des SRAM

Produit discontinué

N° de stock RS:: 188-5323
Référence fabricant:: CY62148ELL-45ZSXI
Fabricant:: Cypress Semiconductor

Documentation technique

Datasheet CY62148ELL-45ZSXI

Législations et de normes

Pays d'origine :: TW

Détails du produit

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages

SRAM (Static Random Access Memory)

Spécifications

Attribut	Valeur
Memory Size	4Mbit
Organisation	512k x 8 bit
Number of Words	512k
Number of Bits per Word	8bit
Maximum Random Access Time	45ns
Clock Frequency	1MHz
Low Power	Yes
Mounting Type	Surface Mount
Package Type	TSOP
Pin Count	32
Dimensions	21.08 x 10.29 x 1.05mm
Maximum Operating Supply Voltage	5.5 V
Height	1.05mm
Minimum Operating Temperature	-40 °C
Width	10.29mm
Length	21.08mm
Minimum Operating Supply Voltage	4.5 V
Maximum Operating Temperature	+85 °C

N° de stock RS:: 188-5323
Référence fabricant:: CY62148ELL-45ZSXI
Fabricant:: Cypress Semiconductor

Datasheet CY62148ELL-45ZSXI