- N° de stock RS:
- 896-2606
- Référence fabricant:
- TRS10E65C,S1AQ(S
- Fabricant:
- Toshiba
- N° de stock RS:
- 896-2606
- Référence fabricant:
- TRS10E65C,S1AQ(S
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
- Pays d'origine :
- CN
Détails du produit
Silicon Carbide (SiC) Schottky Diode, Toshiba
A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.
Low-loss and high-efficiency power conversion
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Diodes and Rectifiers, Toshiba
Spécifications
Attribut | Valeur |
---|---|
Mounting Type | Through Hole |
Package Type | TO-220 |
Maximum Continuous Forward Current | 10A |
Peak Reverse Repetitive Voltage | 650V |
Diode Configuration | Single |
Diode Type | Schottky |
Pin Count | 2 |
Maximum Forward Voltage Drop | 1.7V |
Number of Elements per Chip | 1 |
Diode Technology | SiC Schottky |
Peak Non-Repetitive Forward Surge Current | 50A |