Infineon BGS13S4N9E6327XTSA1, RF Switch 3GHz 15dB Isolation CMOS 9-Pin TSNP-9-3

  • N° de stock RS 175-1422
  • Référence fabricant BGS13S4N9E6327XTSA1
  • Fabricant Infineon
Documentation technique
Législations et de normes
Déclaration de conformité RoHS
Pays d'origine : MY
Détails du produit

The BGS13S4N9 RF MOS switch is specifically designed for cell phone and mobile applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. It offers outstanding ESD robustness of 1kV.This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode.

3 high-linearity TRx paths with power handling capability of up to 30 dBm
Small form factor 1.1 x 1.1 mm2 x 0.375 mm
Low insertion loss @2.7GHz 0.55 dB
Low harmonic generation
High port-to-port-isolation
0.1 to 3.0 GHz coverage
On-chip control logic including ESD protection
GPIO control interface
No power supply blocking required
High EMI robustness

Attribut Valeur
Maximum Insertion Loss 0.65dB
Minimum Isolation 15dB
Number of Switches 1
Technology CMOS
Mounting Type Surface Mount
Package Type TSNP-9-3
Pin Count 9
Dimensions 1.1 x 1.1 x 0.37mm
Length 1.1mm
Width 1.1mm
Height 0.37mm
Maximum Frequency 3GHz
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 1.8 V
Maximum Operating Supply Voltage 3.3 V
12200 En stock pour livraison sous 1 jour(s)
Prix Each (In a Pack of 100)
(TVA exclue)
(TVA incluse)
Prix par unité
le paquet*
100 +
0,127 €
12,70 €
*prix conseillé
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