- N° de stock RS:
- 177-5563
- Référence fabricant:
- PIN-UV-100DQC
- Fabricant:
- OSI Optoelectronics
- N° de stock RS:
- 177-5563
- Référence fabricant:
- PIN-UV-100DQC
- Fabricant:
- OSI Optoelectronics
Documentation technique
Législations et de normes
- Pays d'origine :
- US
Détails du produit
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
Spécifications
Attribut | Valeur |
---|---|
Spectrums Detected | Ultraviolet |
Wavelength of Peak Sensitivity | 980nm |
Package Type | Ceramic |
Amplifier Function | No |
Mounting Type | Through Hole |
Number of Pins | 2 |
Diode Material | Si |
Minimum Wavelength Detected | 190nm |
Maximum Wavelength Detected | 1100nm |
Length | 16.51mm |
Width | 14.99mm |
Height | 2.03mm |
Peak Photo Sensitivity | 0.5A/W |
Polarity | Reverse |