Hex SiC N-Channel MOSFET, 87 A, 1200 V, 28-Pin Six Pack Wolfspeed CCS050M12CM2

N° de stock RS:: 916-3891
Référence fabricant:: CCS050M12CM2
Fabricant:: Wolfspeed

Hex SiC N-Channel MOSFET, 87 A, 1200 V, 28-Pin Six Pack Wolfspeed CCS050M12CM2

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N° de stock RS:: 916-3891
Référence fabricant:: CCS050M12CM2
Fabricant:: Wolfspeed

Documentation technique

Législations et de normes

Détails du produit

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Spécifications

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	87 A
Maximum Drain Source Voltage	1200 V
Package Type	Six Pack
Mounting Type	Screw Mount
Pin Count	28
Maximum Drain Source Resistance	63 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Maximum Power Dissipation	312 W
Transistor Configuration	3 Phase
Maximum Gate Source Voltage	-10 V, +25 V
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Width	47mm
Typical Gate Charge @ Vgs	180 nC @ 10 V
Length	108mm
Number of Elements per Chip	6
Forward Diode Voltage	2.3V
Height	17mm

N° de stock RS:: 916-3891
Référence fabricant:: CCS050M12CM2
Fabricant:: Wolfspeed