N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220 Toshiba TK10E60W,S1VX(S

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MOSFET Transistors, Toshiba

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	9.7 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	20 nC @ 10 V
Length	10.16mm
Width	4.45mm
Number of Elements per Chip	1
Series	TK
Height	15.1mm