P-Channel MOSFET, 1.17 A, 60 V, 3-Pin SOT-223 Infineon BSP315PH6327XTSA1
- N° de stock RS:
- 826-9238P
- Référence fabricant:
- BSP315PH6327XTSA1
- Fabricant:
- Infineon
En cours d'approvisionnement - expédition le 02/05/2024, livraison sous 4 jour(s)
Ajouté
Prix l'unité (conditionné en bobine) Pour une quantité inférieure à 150, la livraison s'effectuera en bande
0,581 €
(TVA exclue)
0,703 €
(TVA incluse)
| Unité | Prix par unité |
| 100 - 200 | 0,581 € |
| 250 - 450 | 0,543 € |
| 500 - 1200 | 0,505 € |
| 1250 + | 0,467 € |
- N° de stock RS:
- 826-9238P
- Référence fabricant:
- BSP315PH6327XTSA1
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
Détails du produit
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Spécifications
Attribut | Valeur |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.17 A |
| Maximum Drain Source Voltage | 60 V |
| Series | SIPMOS |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 800 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 5.2 nC @ 10 V |
| Width | 3.5mm |
| Length | 6.5mm |
| Number of Elements per Chip | 1 |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |
- N° de stock RS:
- 826-9238P
- Référence fabricant:
- BSP315PH6327XTSA1
- Fabricant:
- Infineon