Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

N° de stock RS:: 826-8829P
Référence fabricant:: IRF7105TRPBF
Fabricant:: Infineon

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

7220 En stock pour livraison sous 1 jour(s)

Ajouté

Prix l'unité (conditionné en bobine) Pour une quantité inférieure à 150, la livraison s'effectuera en bande

0,501 €

(TVA exclue)

0,606 €

(TVA incluse)

Unité	Prix par unité
200 - 480	0,501 €
500 - 980	0,479 €
1000 - 1980	0,448 €
2000 +	0,421 €

N° de stock RS:: 826-8829P
Référence fabricant:: IRF7105TRPBF
Fabricant:: Infineon

Documentation technique

Législations et de normes

Pays d'origine :: CN

Détails du produit

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Spécifications

Attribut	Valeur
Channel Type	N, P
Maximum Continuous Drain Current	2.3 A, 3.5 A
Maximum Drain Source Voltage	25 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	160 mΩ, 400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	10 nC @ 10 V, 9.4 nC @ 10 V
Number of Elements per Chip	2
Transistor Material	Si
Width	4mm
Height	1.5mm
Minimum Operating Temperature	-55 °C

N° de stock RS:: 826-8829P
Référence fabricant:: IRF7105TRPBF
Fabricant:: Infineon