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Vishay IRF710 Type N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB
- N° de stock RS:
- 543-0074
- Numéro d'article Distrelec:
- 171-15-165
- Référence fabricant:
- IRF710PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,66 €
(TVA exclue)
2,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 195 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 230 unité(s) expédiée(s) à partir du 22 juillet 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,66 € |
| 10 - 49 | 1,56 € |
| 50 - 99 | 1,14 € |
| 100 - 249 | 1,07 € |
| 250 + | 0,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 543-0074
- Numéro d'article Distrelec:
- 171-15-165
- Référence fabricant:
- IRF710PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Series | IRF710 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Series IRF710 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF710 Series Power MOSFET, 400V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - IRF710PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial and electronic systems. It operates over a wide temperature span and is packaged for through-hole mounting, offering a compact, serviceable option for boards and assemblies that require discrete transistor switching at elevated voltages.
Features and Benefits:
• 400V drain-source rating enables high-voltage switching applications • 3.6Ω Rds(on) reduces conduction losses in low-current circuits • 1.2A continuous drain current supports modest load currents • 17nC typical gate charge allows predictable switching control • 36W power dissipation handles intermittent thermal loading • 20V gate-source limit permits common gate-drive voltages
Applications
• Suitable for industrial relay and contactor driver stages • Ideal for high-voltage laboratory power supplies • Used for mains-side snubber and bleed resistor switching • Can be used for motor control in low-current ancillary circuits
What mounting style does it use and why is that useful?
It is a through-hole device in a TO-220AB package which simplifies heat-sinking and replacement on serviceable assemblies.
What ambient temperature range can it tolerate during operation?
The device is specified for operation from -55°C up to 150°C, allowing use in environments with wide thermal variation.
How does gate charge affect driver selection?
With a typical gate charge of 17nC, drivers must supply sufficient Peak current for desired switching speeds while managing gate-drive energy.
What is the maximum safe gate voltage to apply?
The maximum gate-source voltage is 20V, so gate-drive circuits should limit control voltages accordingly to avoid damage.
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