Récemment recherché

    Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B Infineon FF6MR12W2M1B11BOMA1

    N° de stock RS:
    201-2810
    Référence fabricant:
    FF6MR12W2M1B11BOMA1
    Fabricant:
    Infineon
    Infineon
    Voir l’ensemble des MOSFETs
    Produit discontinué
    N° de stock RS:
    201-2810
    Référence fabricant:
    FF6MR12W2M1B11BOMA1
    Fabricant:
    Infineon

    Documentation technique


    Législations et de normes


    Détails du produit

    The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.

    High current density
    Low inductive design
    Low switching losses
    RoHS-compliant modules


    Spécifications

    AttributValeur
    Channel TypeN
    Maximum Continuous Drain Current200 A
    Maximum Drain Source Voltage1200 V
    Package TypeAG-EASY2B
    Mounting TypeScrew Mount
    Maximum Drain Source Resistance0.00825 Ω
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage5.55V
    Number of Elements per Chip2
    Transistor MaterialSiC
    SeriesCoolSiC
    Produit discontinué