Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B Infineon FF6MR12W2M1B11BOMA1
- N° de stock RS:
- 201-2810
- Référence fabricant:
- FF6MR12W2M1B11BOMA1
- Fabricant:
- Infineon
Voir l’ensemble des MOSFETs
Produit discontinué
- N° de stock RS:
- 201-2810
- Référence fabricant:
- FF6MR12W2M1B11BOMA1
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
Détails du produit
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
Spécifications
| Attribut | Valeur |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | AG-EASY2B |
| Mounting Type | Screw Mount |
| Maximum Drain Source Resistance | 0.00825 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.55V |
| Number of Elements per Chip | 2 |
| Transistor Material | SiC |
| Series | CoolSiC |
Produit discontinué