P-Channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK Vishay IRFU9110PBF
- N° de stock RS:
- 178-0905
- Référence fabricant:
- IRFU9110PBF
- Fabricant:
- Vishay
Produit discontinué
- N° de stock RS:
- 178-0905
- Référence fabricant:
- IRFU9110PBF
- Fabricant:
- Vishay
Documentation technique
Législations et de normes
Détails du produit
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
Dynamic dV/dt rating
Repetitive avalanche rated
Repetitive avalanche rated
MOSFET Transistors, Vishay Semiconductor
Spécifications
Attribut | Valeur |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 3.1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.2 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 2.38mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 6.22mm |