- N° de stock RS:
- 178-0818
- Référence fabricant:
- IRFBE30PBF
- Fabricant:
- Vishay
- N° de stock RS:
- 178-0818
- Référence fabricant:
- IRFBE30PBF
- Fabricant:
- Vishay
Documentation technique
Législations et de normes
Détails du produit
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Spécifications
Attribut | Valeur |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 4.1 A |
Maximum Drain Source Voltage | 800 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 3 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Length | 10.41mm |
Transistor Material | Si |
Width | 4.7mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 78 nC @ 10 V |
Height | 9.01mm |
Minimum Operating Temperature | -55 °C |