Dual N-Channel MOSFET, 7 A, 40 V, 8-Pin SOIC Vishay SI4286DY-T1-GE3

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MOSFET Transistors, Vishay Semiconductor

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	7 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	40 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.9 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Transistor Material	Si
Number of Elements per Chip	2
Width	4mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	6.8 nC @ 10 V
Height	1.55mm
Minimum Operating Temperature	-55 °C