P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP Infineon IRF5806TRPBF
- N° de stock RS:
- 145-9508
- Référence fabricant:
- IRF5806TRPBF
- Fabricant:
- Infineon
Produit discontinué
- N° de stock RS:
- 145-9508
- Référence fabricant:
- IRF5806TRPBF
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
- Pays d'origine :
- MY
Détails du produit
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Spécifications
Attribut | Valeur |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 147 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.2V |
| Minimum Gate Threshold Voltage | 0.45V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 3.1mm |
| Typical Gate Charge @ Vgs | 8.3 nC @ 4.5 V |
| Width | 1.7mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 1mm |
| Series | HEXFET |
| Minimum Operating Temperature | -55 °C |
- N° de stock RS:
- 145-9508
- Référence fabricant:
- IRF5806TRPBF
- Fabricant:
- Infineon