N-Channel MOSFET, 49.2 A, 650 V, 3-Pin TO-247 Toshiba TK49N65W5,S1F(S

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MOSFET Transistors, Toshiba

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	49.2 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247
Series	DTMOSIV
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	57 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	400 W
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	5.02mm
Typical Gate Charge @ Vgs	185 nC @ 10 V
Length	15.94mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	20.95mm
Forward Diode Voltage	1.7V