| Channel Type | N |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.3 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Height | 19mm |
| Maximum Operating Temperature | +150 °C |
| Width | 4.8mm |
| Length | 15.9mm |
| Transistor Material | Si |
| Series | 2SK |
| Minimum Operating Temperature | -55 °C |