STMicroelectronics STGW25S120DF3 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 906-2814
- Référence fabricant:
- STGW25S120DF3
- Fabricant:
- STMicroelectronics
Produit discontinué
- N° de stock RS:
- 906-2814
- Référence fabricant:
- STGW25S120DF3
- Fabricant:
- STMicroelectronics
Législations et de normes
- Pays d'origine :
- CN
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Energy Rating | 4.88mJ |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 1600pF |
| Minimum Operating Temperature | -55 °C |