- N° de stock RS:
- 906-2814
- Référence fabricant:
- STGW25S120DF3
- Fabricant:
- STMicroelectronics
Produit discontinué
- N° de stock RS:
- 906-2814
- Référence fabricant:
- STGW25S120DF3
- Fabricant:
- STMicroelectronics
Législations et de normes
- Pays d'origine :
- CN
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Energy Rating | 4.88mJ |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 1600pF |
Minimum Operating Temperature | -55 °C |