STMicroelectronics STGWT60H65FB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 829-4660
- Référence fabricant:
- STGWT60H65FB
- Fabricant:
- STMicroelectronics
Produit discontinué
Produit de remplacement
Ce produit n'est pas disponible actuellement. Voici notre produit de remplacement:
- N° de stock RS:
- 829-4660
- Référence fabricant:
- STGWT60H65FB
- Fabricant:
- STMicroelectronics
Législations et de normes
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |