Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 796-5064
- Référence fabricant:
- GT50JR22
- Fabricant:
- Toshiba
8 En stock, livraison sous 1 jour(s) (stock Europe)
93 En stock, livraison sous 3 à 5 jours (stock Europe)
Ajouté
Prix la pièce
5,13 €
(TVA exclue)
6,21 €
(TVA incluse)
| Unité | Prix par unité |
| 1 - 9 | 5,13 € |
| 10 - 49 | 3,25 € |
| 50 - 124 | 3,17 € |
| 125 - 249 | 3,14 € |
| 250 + | 3,07 € |
- N° de stock RS:
- 796-5064
- Référence fabricant:
- GT50JR22
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |
- N° de stock RS:
- 796-5064
- Référence fabricant:
- GT50JR22
- Fabricant:
- Toshiba