Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
- N° de stock RS:
- 796-5046
- Référence fabricant:
- GT15J341
- Fabricant:
- Toshiba
30 En stock pour livraison sous 1 jour(s)
Ajouté
Prix L'unité (en paquet de 5)
1,894 €
(TVA exclue)
2,292 €
(TVA incluse)
| Unité | Prix par unité | le paquet* |
| 5 - 20 | 1,894 € | 9,47 € |
| 25 - 245 | 1,612 € | 8,06 € |
| 250 - 395 | 1,422 € | 7,11 € |
| 400 - 795 | 1,232 € | 6,16 € |
| 800 + | 1,068 € | 5,34 € |
| *prix conseillé | ||
- N° de stock RS:
- 796-5046
- Référence fabricant:
- GT15J341
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 15 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 30 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 796-5046
- Référence fabricant:
- GT15J341
- Fabricant:
- Toshiba