- N° de stock RS:
- 795-7041
- Référence fabricant:
- STGB10NC60HDT4
- Fabricant:
- STMicroelectronics
60 En stock, livraison sous 1 jour(s) (stock Europe)
935 En stock, livraison sous 3 à 5 jours (stock Europe)
Prix L'unité (en paquet de 5)
1,658 €
(TVA exclue)
2,006 €
(TVA incluse)
Unité | Prix par unité | le paquet* |
5 - 20 | 1,658 € | 8,29 € |
25 - 45 | 1,576 € | 7,88 € |
50 - 120 | 1,42 € | 7,10 € |
125 - 245 | 1,276 € | 6,38 € |
250 + | 1,214 € | 6,07 € |
*prix conseillé |
- N° de stock RS:
- 795-7041
- Référence fabricant:
- STGB10NC60HDT4
- Fabricant:
- STMicroelectronics
Législations et de normes
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 65 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 9.35 x 4.6mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |