STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 792-5827
- Référence fabricant:
- STGW80V60DF
- Fabricant:
- STMicroelectronics
578 En stock pour livraison sous 1 jour(s)
Ajouté
Prix la pièce
6,16 €
(TVA exclue)
7,45 €
(TVA incluse)
| Unité | Prix par unité |
| 1 - 4 | 6,16 € |
| 5 - 9 | 5,85 € |
| 10 - 24 | 5,27 € |
| 25 - 49 | 4,73 € |
| 50 + | 4,49 € |
- N° de stock RS:
- 792-5827
- Référence fabricant:
- STGW80V60DF
- Fabricant:
- STMicroelectronics
Législations et de normes
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |