STMicroelectronics STGW20V60F IGBT, 20 A 600 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 791-7621
- Référence fabricant:
- STGW20V60F
- Fabricant:
- STMicroelectronics
45 En stock pour livraison sous 1 jour(s)
Ajouté
Prix L'unité (en paquet de 5)
3,422 €
(TVA exclue)
4,141 €
(TVA incluse)
| Unité | Prix par unité | le paquet* |
| 5 - 20 | 3,422 € | 17,11 € |
| 25 - 45 | 3,25 € | 16,25 € |
| 50 - 120 | 2,926 € | 14,63 € |
| 125 - 245 | 2,634 € | 13,17 € |
| 250 + | 2,50 € | 12,50 € |
| *prix conseillé | ||
- N° de stock RS:
- 791-7621
- Référence fabricant:
- STGW20V60F
- Fabricant:
- STMicroelectronics
Législations et de normes
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 167 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
- N° de stock RS:
- 791-7621
- Référence fabricant:
- STGW20V60F
- Fabricant:
- STMicroelectronics