STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole
- N° de stock RS:
- 170-2164
- Référence fabricant:
- STGY50NC60WD
- Fabricant:
- STMicroelectronics
Produit discontinué
- N° de stock RS:
- 170-2164
- Référence fabricant:
- STGY50NC60WD
- Fabricant:
- STMicroelectronics
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 110 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 278 W |
| Package Type | Max247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.9 x 5.3 x 20.3mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 170-2164
- Référence fabricant:
- STGY50NC60WD
- Fabricant:
- STMicroelectronics