STMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 168-8808
- Référence fabricant:
- STGW30H60DFB
- Fabricant:
- STMicroelectronics
En cours d'approvisionnement - expédition le 23/10/2024, livraison sous 4 jour(s)
Ajouté
Prix L'unité (dans un tube de 30)
2,668 €
(TVA exclue)
3,228 €
(TVA incluse)
| Unité | Prix par unité | le tube* |
| 30 - 30 | 2,668 € | 80,04 € |
| 60 - 120 | 2,054 € | 61,62 € |
| 150 + | 1,884 € | 56,52 € |
| *prix conseillé | ||
- N° de stock RS:
- 168-8808
- Référence fabricant:
- STGW30H60DFB
- Fabricant:
- STMicroelectronics
Législations et de normes
- Pays d'origine :
- CN
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 260 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |