Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole
- N° de stock RS:
- 168-7764
- Référence fabricant:
- GT20J341
- Fabricant:
- Toshiba
En cours d'approvisionnement - expédition le 04/10/2024, livraison sous 4 jour(s)
Ajouté
Prix L'unité (dans un tube de 50)
1,769 €
(TVA exclue)
2,14 €
(TVA incluse)
| Unité | Prix par unité | le tube* |
| 50 + | 1,769 € | 88,45 € |
| *prix conseillé | ||
- N° de stock RS:
- 168-7764
- Référence fabricant:
- GT20J341
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
- Pays d'origine :
- JP
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 45 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 168-7764
- Référence fabricant:
- GT20J341
- Fabricant:
- Toshiba