- N° de stock RS:
- 168-6463
- Référence fabricant:
- STGE200NB60S
- Fabricant:
- STMicroelectronics
En cours d'approvisionnement - expédition le 29/05/2024, livraison sous 4 jour(s)
Ajouté
Prix L'unité (dans un tube de 10)
27,237 €
(TVA exclue)
32,957 €
(TVA incluse)
Unité | Prix par unité | le tube* |
10 + | 27,237 € | 272,37 € |
*prix conseillé |
- N° de stock RS:
- 168-6463
- Référence fabricant:
- STGE200NB60S
- Fabricant:
- STMicroelectronics
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | ISOTOP |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 4 |
Transistor Configuration | Single |
Dimensions | 38.2 x 25.5 x 9.1mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
- N° de stock RS:
- 168-6463
- Référence fabricant:
- STGE200NB60S
- Fabricant:
- STMicroelectronics