- N° de stock RS:
- 146-1725
- Référence fabricant:
- FGW40N120HD
- Fabricant:
- Fuji Electric
Produit discontinué
- N° de stock RS:
- 146-1725
- Référence fabricant:
- FGW40N120HD
- Fabricant:
- Fuji Electric
Législations et de normes
- Pays d'origine :
- JP
Détails du produit
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 340 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.9 x 5.03 x 20.95mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |