- N° de stock RS:
- 194-776
- Référence fabricant:
- IXGH16N170
- Fabricant:
- IXYS
1 En stock, livraison sous 1 jour(s) (stock Europe)
8 En stock, livraison sous 3 à 5 jours (stock Europe)
Ajouté
Prix la pièce
12,12 €
(TVA exclue)
14,67 €
(TVA incluse)
Unité | Prix par unité |
1 - 9 | 12,12 € |
10 - 19 | 10,53 € |
20 + | 10,02 € |
- N° de stock RS:
- 194-776
- Référence fabricant:
- IXGH16N170
- Fabricant:
- IXYS
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 32 A |
Maximum Collector Emitter Voltage | 1700 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247AD |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 194-776
- Référence fabricant:
- IXGH16N170
- Fabricant:
- IXYS