Fuji Electric 7MBR25VA-120-50 3 Phase Bridge IGBT Module, 25 A 1200 V, 24-Pin M711, Through Hole
- N° de stock RS:
- 168-4557
- Référence fabricant:
- 7MBR25VA-120-50
- Fabricant:
- Fuji Electric
Produit discontinué
- N° de stock RS:
- 168-4557
- Référence fabricant:
- 7MBR25VA-120-50
- Fabricant:
- Fuji Electric
Documentation technique
Législations et de normes
- Pays d'origine :
- JP
Détails du produit
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 25 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 170 W |
| Configuration | 3 Phase Bridge |
| Package Type | M711 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 24 |
| Transistor Configuration | 3 Phase |
| Dimensions | 107.5 x 45 x 17mm |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 168-4557
- Référence fabricant:
- 7MBR25VA-120-50
- Fabricant:
- Fuji Electric