- N° de stock RS:
- 168-4534
- Référence fabricant:
- 2MBI100U4A-120-50
- Fabricant:
- Fuji Electric
Produit discontinué
- N° de stock RS:
- 168-4534
- Référence fabricant:
- 2MBI100U4A-120-50
- Fabricant:
- Fuji Electric
Documentation technique
Législations et de normes
- Pays d'origine :
- JP
Détails du produit
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 540 W |
Package Type | M232 |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 92 x 34 x 30mm |
Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 168-4534
- Référence fabricant:
- 2MBI100U4A-120-50
- Fabricant:
- Fuji Electric