Infineon FS200R12KT4RBOSA1 3 Phase Bridge IGBT Module, 280 A 1200 V, 35-Pin EconoPACK 3, Surface Mount
- N° de stock RS:
- 145-8764
- Référence fabricant:
- FS200R12KT4RBOSA1
- Fabricant:
- Infineon
En cours d'approvisionnement - expédition le 26/03/2026, livraison sous 4 jour(s)
Ajouté
Prix L'unité (dans un plateau de 10)
237,835 €
(TVA exclue)
287,78 €
(TVA incluse)
Unité | Prix par unité | le plateau* |
10 + | 237,835 € | 2 378,35 € |
*prix conseillé |
- N° de stock RS:
- 145-8764
- Référence fabricant:
- FS200R12KT4RBOSA1
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
Statut RoHS : Exempté
- Pays d'origine :
- MY
Détails du produit
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 280 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1000 W |
Package Type | EconoPACK 3 |
Configuration | 3 Phase Bridge |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 35 |
Transistor Configuration | 3 Phase |
Dimensions | 122 x 62 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 145-8764
- Référence fabricant:
- FS200R12KT4RBOSA1
- Fabricant:
- Infineon