IXYS MUBW15-12A6K 3 Phase Bridge IGBT Module, 19 A 1200 V, 25-Pin, PCB Mount
- N° de stock RS:
- 194-596
- Référence fabricant:
- MUBW15-12A6K
- Fabricant:
- IXYS
Produit discontinué
- N° de stock RS:
- 194-596
- Référence fabricant:
- MUBW15-12A6K
- Fabricant:
- IXYS
Législations et de normes
Détails du produit
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 19 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Configuration | 3 Phase Bridge |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 25 |
| Transistor Configuration | 3 Phase |
| Dimensions | 82 x 37.4 x 17.1mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +125 °C |
- N° de stock RS:
- 194-596
- Référence fabricant:
- MUBW15-12A6K
- Fabricant:
- IXYS