Cypress Semiconductor, S29GL064N90FFI020

Documentation technique
Législations et de normes
Déclaration de conformité RoHS
Détails du produit

The S29GL-N family of devices are 3.0V single-power Flash memory manufactured using 110nm MirrorBit technology. TheS29GL064N is a 64Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices have 16bit wide data bus only or a 16bit wide data bus that can also function as an 8bit wide data bus by using the BYTE# input. The devices can be programmed in the host system or in standard EPROM programmers. Access times as fast as 90ns are available. Each access time has a specific VCC. Package offerings include 48pin TSOP, 56pin TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA depending on model number. Each device has separate chip enable, write enable and output enable controls.

Each device requires only a single 3.0V power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program feature provides shorter programming times through increased voltage on theWP#/ACC or ACC input. This feature facilitates factory throughput during system production but may also be used in the field if desired. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

Attribut Valeur
Memory Size 64Mbit
Interface Type CFI
Package Type BGA
Pin Count 64
Organisation 8M x 8 bit
Mounting Type Surface Mount
Cell Type NOR
Minimum Operating Supply Voltage 2.7 V
Maximum Operating Supply Voltage 3.6 V
Length 13mm
Height 1mm
Width 11mm
Dimensions 13 x 11 x 1mm
Number of Bits per Word 8bit
Maximum Random Access Time 90ns
Maximum Operating Temperature +85 °C
Number of Words 8M
Minimum Operating Temperature -40 °C
180 En stock pour livraison sous 1 jour(s)
Prix Each (In a Tray of 180)
(TVA exclue)
(TVA incluse)
Prix par unité
le plateau*
180 +
3,189 €
574,02 €
*prix conseillé