ON Semiconductor, FJPF2145TU, Emmitter Switched

Documentation technique
Législations et de normes
Déclaration de conformité RoHS
Détails du produit

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Spécifications
Attribut Valeur
Transistor Type NPN
Maximum DC Collector Current 5 A
Maximum Collector Source Voltage 0.209V
Maximum Power Dissipation 40 W
Minimum DC Current Gain 8
Mounting Type Through Hole
Package Type TO-220F
Pin Count 3
Maximum Base Source Voltage ±20V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Base Current 1.5A
Category Power Transistor
Dimensions 10.36 x 4.9 x 16.07mm
Height 16.07mm
Maximum Operating Temperature +125 °C
Width 4.9mm
Minimum Operating Temperature -55 °C
Length 10.36mm
300 En stock pour livraison sous 1 jour(s)
Prix Each (In a Tube of 50)
0,587
(TVA exclue)
0,71
(TVA incluse)
Unité
Prix par unité
le tube*
50 +
0,587 €
29,35 €
*prix conseillé