Infineon BCV26E6327HTSA1 PNP Darlington Transistor, 500 mA 30 V HFE:20000, 3-Pin SOT-23

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Bipolar Transistors, Infineon

Attribut	Valeur
Transistor Type	PNP
Maximum Continuous Collector Current	500 mA
Maximum Collector Emitter Voltage	30 V
Maximum Emitter Base Voltage	10 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	20000
Maximum Base Emitter Saturation Voltage	1.5 V
Maximum Collector Base Voltage	40 V
Maximum Collector Emitter Saturation Voltage	1 V
Maximum Collector Cut-off Current	10µA
Maximum Power Dissipation	360 mW
Length	2.9mm
Height	0.9mm
Dimensions	2.9 x 1.3 x 0.9mm
Maximum Operating Temperature	+150 °C
Width	1.3mm