onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

N° de stock RS:: 688-1502
Référence fabricant:: MJ11015G
Fabricant:: onsemi

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

34 En stock, livraison sous 1 jour(s) (stock Europe)

190 En stock, livraison sous 3 à 5 jours (stock Europe)

Ajouté

Prix L'unité (en paquet de 2)

7,67 €

(TVA exclue)

9,28 €

(TVA incluse)

Unité	Prix par unité	le paquet*
2 - 8	7,67 €	15,34 €
10 - 98	6,60 €	13,20 €
100 - 198	5,48 €	10,96 €
200 - 498	5,17 €	10,34 €
500 +	4,82 €	9,64 €
*prix conseillé

N° de stock RS:: 688-1502
Référence fabricant:: MJ11015G
Fabricant:: onsemi

Documentation technique

Législations et de normes

Détails du produit

PNP Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

Spécifications

Attribut	Valeur
Transistor Type	PNP
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Minimum Operating Temperature	-55 °C
Width	26.67mm
Maximum Operating Temperature	+200 °C
Height	8.51mm
Length	39.37mm
Dimensions	39.37 x 26.67 x 8.51mm

N° de stock RS:: 688-1502
Référence fabricant:: MJ11015G
Fabricant:: onsemi