onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

N° de stock RS:: 103-5055
Référence fabricant:: MJ11015G
Fabricant:: onsemi

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

En cours d'approvisionnement - expédition le 06/08/2024, livraison sous 4 jour(s)

Ajouté

Prix L'unité (dans un plateau de 100)

5,638 €

(TVA exclue)

6,822 €

(TVA incluse)

Unité	Prix par unité	le plateau*
100 +	5,638 €	563,80 €
*prix conseillé

N° de stock RS:: 103-5055
Référence fabricant:: MJ11015G
Fabricant:: onsemi

Documentation technique

Législations et de normes

Pays d'origine :: CZ

Détails du produit

PNP Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

Spécifications

Attribut	Valeur
Transistor Type	PNP
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Maximum Operating Temperature	+200 °C
Dimensions	39.37 x 26.67 x 8.51mm
Length	39.37mm
Width	26.67mm
Height	8.51mm
Minimum Operating Temperature	-55 °C

N° de stock RS:: 103-5055
Référence fabricant:: MJ11015G
Fabricant:: onsemi