- N° de stock RS:
- 100-7565
- Référence fabricant:
- MJ11016G
- Fabricant:
- onsemi
600 En stock pour livraison sous 1 jour(s)
Ajouté
Prix L'unité (dans un plateau de 100)
4,072 €
(TVA exclue)
4,927 €
(TVA incluse)
Unité | Prix par unité | le plateau* |
100 + | 4,072 € | 407,20 € |
*prix conseillé |
- N° de stock RS:
- 100-7565
- Référence fabricant:
- MJ11016G
- Fabricant:
- onsemi
Documentation technique
Législations et de normes
- Pays d'origine :
- CZ
Détails du produit
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
Spécifications
Attribut | Valeur |
---|---|
Transistor Type | NPN |
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 120 V |
Maximum Emitter Base Voltage | 5 V |
Package Type | TO-204 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Number of Elements per Chip | 1 |
Minimum DC Current Gain | 200 |
Maximum Base Emitter Saturation Voltage | 5 V |
Maximum Collector Base Voltage | 120 V |
Maximum Collector Emitter Saturation Voltage | 4 V |
Dimensions | 39.37 x 26.67 x 8.51mm |
Maximum Operating Temperature | +200 °C |
Height | 8.51mm |
Length | 39.37mm |
Width | 26.67mm |
Minimum Operating Temperature | -55 °C |
- N° de stock RS:
- 100-7565
- Référence fabricant:
- MJ11016G
- Fabricant:
- onsemi