Infineon BFP842ESDH6327XTSA1 NPN Transistor, 40 mA, 2.9 V, 3.25 V, 4-Pin SOT-343

  • N° de stock RS 170-2256
  • Référence fabricant BFP842ESDH6327XTSA1
  • Fabricant Infineon
Documentation technique
Législations et de normes
Déclaration de conformité RoHS
Détails du produit

The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.

Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads

Attribut Valeur
Transistor Type NPN
Maximum DC Collector Current 40 mA
Maximum Collector Emitter Voltage 2.9 V, 3.25 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 120 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 3.5 V, 4.1 V
Maximum Operating Frequency 60 GHz
Pin Count 4
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Height 0.8mm
Automotive Standard AEC-Q101
Dimensions 2 x 1.25 x 0.8mm
Length 2mm
Transistor Material SiGe
Width 1.25mm
3000 En stock pour livraison sous 1 jour(s)
Prix Each (On a Reel of 3000)
(TVA exclue)
(TVA incluse)
Prix par unité
la bobine*
3000 - 3000
0,141 €
423,00 €
6000 +
0,138 €
414,00 €
*prix conseillé