Infineon BFP640ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

  • N° de stock RS 145-8845
  • Référence fabricant BFP640ESDH6327XTSA1
  • Fabricant Infineon
Documentation technique
Législations et de normes
Déclaration de conformité RoHS
Pays d'origine : CN
Détails du produit

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Spécifications
Attribut Valeur
Transistor Type NPN
Maximum DC Collector Current 50 mA
Maximum Collector Emitter Voltage 4.1 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 200 mW
Minimum DC Current Gain 110
Transistor Configuration Single
Maximum Collector Base Voltage 4.8 V
Maximum Emitter Base Voltage 0.5 V
Maximum Operating Frequency 45 GHz
Pin Count 4
Number of Elements per Chip 1
Height 0.9mm
Maximum Operating Temperature +150 °C
Dimensions 2 x 1.25 x 0.9mm
Length 2mm
Transistor Material SiGe
Width 1.25mm
En cours d'approvisionnement - expédition le 21/07/2020, livraison sous 1 jour(s)
Prix Each (On a Reel of 3000)
0,182
(TVA exclue)
0,22
(TVA incluse)
Unité
Prix par unité
la bobine*
3000 +
0,182 €
546,00 €
*prix conseillé