JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Prix Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
N° de stock RS 103-8160
Référence fabricantPMBF4393,215
MarqueNXP
0,151 €
Each (On a Reel of 3000)
Unité
N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 112-4185
Référence fabricantPMBF4393,215
MarqueNXP
0,31 €
Each
Unité
N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
N° de stock RS 166-0535
Référence fabricantBF510,215
MarqueNXP
0,145 €
Each (On a Reel of 3000)
Unité
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 166-0537
Référence fabricantBF556A,215
MarqueNXP
0,316 €
Each (On a Reel of 3000)
Unité
N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 626-2311
Référence fabricantBF513,215
MarqueNXP
0,528 €
Each (In a Pack of 10)
Unité
N 10 → 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 179-1061
Référence fabricantPMBFJ309,215
MarqueNXP
0,103 €
Each (On a Reel of 3000)
Unité
N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 166-0547
Référence fabricantPMBF4391,215
MarqueNXP
0,096 €
Each (On a Reel of 3000)
Unité
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
N° de stock RS 103-8162
Référence fabricantPMBFJ177,215
MarqueNXP
0,112 €
Each (On a Reel of 3000)
Unité
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 112-5510
Référence fabricantPMBFJ177,215
MarqueNXP
0,308 €
Each (In a Pack of 5)
Unité
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
N° de stock RS 166-0536
Référence fabricantBF513,215
MarqueNXP
0,23 €
Each (On a Reel of 3000)
Unité
N 10 → 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 626-2282
Référence fabricantBF510,215
MarqueNXP
0,154 €
Each (In a Pack of 10)
Unité
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 626-2412
Référence fabricantBF861C,215
MarqueNXP
0,607 €
Each (In a Pack of 10)
Unité
N 12 → 25mA 25 V +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 626-2355
Référence fabricantBF556A,215
MarqueNXP
0,27 €
Each (In a Pack of 10)
Unité
N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 626-3314
Référence fabricantPMBFJ309,215
MarqueNXP
0,296 €
Each (In a Pack of 10)
Unité
N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
N° de stock RS 626-3229
Référence fabricantPMBF4391,215
MarqueNXP
0,276 €
Each (In a Pack of 10)
Unité
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
N° de stock RS 124-2284
Référence fabricantBF861C,215
MarqueNXP
0,264 €
Each (On a Reel of 3000)
Unité
N 12 → 25mA 25 V -25 V, +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm