Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B Infineon FF6MR12W2M1B11BOMA1

The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.

High current density
Low inductive design
Low switching losses
RoHS-compliant modules